کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788414 | 1023469 | 2010 | 5 صفحه PDF | دانلود رایگان |
We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm2 over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of μFET = 0.20 cm2/V s compared to that with PVP.
Journal: Current Applied Physics - Volume 10, Issue 4, July 2010, Pages 1132–1136