کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788505 | 1524162 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ni doped ZnO thin films for diluted magnetic semiconductor materials
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ni doped ZnO thin films for diluted magnetic semiconductor materials Ni doped ZnO thin films for diluted magnetic semiconductor materials](/preview/png/1788505.png)
چکیده انگلیسی
Ni doped ZnO (Zn1âxNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20Â at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1âxNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminescence (PL). A higher magnetic moment was acquired from the annealed Zn1âxNixO film doped with 5Â at.% Ni, which was attributed to a better preferred orientation from a primary phase Ni2+:ZnO in the film. A relatively more pronounced ZnO(0Â 0Â 2) peak observed from the Zn1âxNixO film doped with 5Â at.% Ni indicated a good crystallinity of the film, which was attributed to a lower level of Ni content in the film as well as the Ni2+ ions substituted for the Zn2+ ions to form Ni2+:ZnO. A slight shift in ZnO(0Â 0Â 2) peak position for the 5 and 10Â at.% Ni doped ZnO films could be due to the distortion of the ZnO lattice caused by the Ni2+ ion substituents for the Zn2+ ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 8, Issues 3â4, May 2008, Pages 408-411
Journal: Current Applied Physics - Volume 8, Issues 3â4, May 2008, Pages 408-411
نویسندگان
E. Liu, P. Xiao, J.S. Chen, B.C. Lim, L. Li,