کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788505 | 1524162 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ni doped ZnO thin films for diluted magnetic semiconductor materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ni doped ZnO (Zn1âxNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20Â at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1âxNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminescence (PL). A higher magnetic moment was acquired from the annealed Zn1âxNixO film doped with 5Â at.% Ni, which was attributed to a better preferred orientation from a primary phase Ni2+:ZnO in the film. A relatively more pronounced ZnO(0Â 0Â 2) peak observed from the Zn1âxNixO film doped with 5Â at.% Ni indicated a good crystallinity of the film, which was attributed to a lower level of Ni content in the film as well as the Ni2+ ions substituted for the Zn2+ ions to form Ni2+:ZnO. A slight shift in ZnO(0Â 0Â 2) peak position for the 5 and 10Â at.% Ni doped ZnO films could be due to the distortion of the ZnO lattice caused by the Ni2+ ion substituents for the Zn2+ ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 8, Issues 3â4, May 2008, Pages 408-411
Journal: Current Applied Physics - Volume 8, Issues 3â4, May 2008, Pages 408-411
نویسندگان
E. Liu, P. Xiao, J.S. Chen, B.C. Lim, L. Li,