The effects of the post-annealing temperatures of TiO2 buffer layers on ferroelectric properties in PLZT thin films

(Pb0.92La0.08)(Zr0.65Ti0.35)O3 (PLZT) thin films with TiO2 buffer layers were deposited on Pt/Ti/SiO2/Si substrates by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films; and the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post-annealing temperatures of TiO2 buffer layers between a Pt bottom electrode and a PLZT thin film. The ferroelectric properties of the PLZT thin films improved as the post-annealing temperatures of TiO2 layers increased, reaching their maximum at 600 °C and decreasing thereafter.