Properties of ITO films deposited by RF superimposed DC magnetron sputtering

ITO films were deposited using a RF superimposed DC magnetron sputtering system with an ITO (90.0 wt% In2O3 and 10.0 wt% SnO2) single ceramic target at either room temperature or the crystallization temperature of ITO films (170 °C). The total sputtering power (DC + RF) was maintained at 70 W, and the RF portion of the total power was varied from 0% to 100%. The discharge voltage and deposition rate decreased with increasing RF portion of the total power. The (2 2 2) X-ray diffraction peak showed the highest intensity at a RF/(RF + DC) power ratio of 50% with a total power of 70 W. The ITO film deposited at a RF/(RF + DC) power ratio of 50% at 170 °C showed relatively low resistivity (2.52 × 10−4 Ω cm).