کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1800235 1024518 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
چکیده انگلیسی

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of ∼30 Ω has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.

▸ Graphene spin-valve devices using Ni81Fe19/Al2O3 electrodes are fabricated. ▸ Atomic layer deposition (ALD) is used to fabricate Al2O3 tunnel barrier. ▸ Graphene surface is terminated with a 3,4,9,10-perylene tetracarboxylic acid (PTCA). ▸ Non-local magneto-resistance (MR) as large as 30 Ω is demonstrated. ▸ Tunnel spin injection into the graphene is achieved with ALD-grown tunnel barrier.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 324, Issue 5, March 2012, Pages 849–852
نویسندگان
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