Stress analysis, structure and magnetic properties of sputter deposited Ni–Mn–Ga ferromagnetic shape memory thin films

The residual stress instituted in Ni–Mn–Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni–Mn–Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 °C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm3 and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.

► Compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing.
► Annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties.
► The highest Curie transition in the films was observed at 365 K.
► The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.