Effect of oxygen annealing on the Mn2+ properties in ZnMnO Films

We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown Zn1−xMnxO thin layers. Annealing in the 300-1000 °C temperature range modifies both lattice parameters and magnetic properties of the layers. Correlation of the results from X-ray diffraction, EPR studies and Raman spectroscopy indicate a modification of the Mn+2-related features in the ZnO matrix.