کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1822268 | 1526316 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of a thin silicon detector with excellent thickness uniformity
ترجمه فارسی عنوان
ساخت یک آشکارساز سیلیکون نازک با یکنواخت ضخامت عالی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
چکیده انگلیسی
We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ÎE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 810, 21 February 2016, Pages 27-31
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 810, 21 February 2016, Pages 27-31
نویسندگان
E. Valtonen, T. Eronen, S. Nenonen, H. Andersson, K. Miikkulainen, S. Eränen, H. Ronkainen, J. Mäkinen, H. Husu, A. Lassila, R. Punkkinen, M. Hirvonen,