کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1823757 | 1526448 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The equivalence of displacement damage in silicon bipolar junction transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The equivalence of displacement damage in silicon bipolar junction transistors The equivalence of displacement damage in silicon bipolar junction transistors](/preview/png/1823757.png)
چکیده انگلیسی
The current gain degradation in silicon bipolar junction transistors (BJTs) is examined under the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the ionizing dose Di and displacement dose Dd verse the chip depth in the BJTs have been calculated for heavy ions. Based on the irradiation testing and calculation results, an approach to evaluate the equivalence of displacement damage in silicon BJTs is given, which could optimize the non-ionizing energy loss (NIEL) methodology and normalize the displacement damage caused by heavy ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 677, 11 June 2012, Pages 61-66
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 677, 11 June 2012, Pages 61-66
نویسندگان
Chaoming Liu, Xingji Li, Hongbin Geng, Erming Rui, Lixin Guo, Jianqun Yang, Liyi Xiao,