Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors

In future high energy physics experiments (HEP), readout integrated circuits for vertexing and tracking applications will be implemented by means of CMOS devices belonging to processes with minimum feature size in the 100 nm span. In these nanoscale technologies the impact of new dielectric materials and processing techniques on the analog behavior of MOSFETs has to be carefully evaluated. This paper is concerned with the study of the analog properties, in particular in terms of noise performance and radiation hardness, of MOSFET devices belonging to a 65 nm CMOS low power technology. The behavior of the 1/f and white noise terms is studied as a function of the main device parameters before and after exposure to 10 keV X-rays and 60Co γ-raysγ-rays. A prototype chip designed in a 65 nm CMOS process including deep n-well MAPS structures and a fast front-end conceived for the readout of high-resistivity pixel sensors will be introduced.