کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1825186 1027357 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology
چکیده انگلیسی

Bonded silicon-on-insulator (SOI) wafers have the capability of realizing monolithic pixel devices, where the silicon resistivity is optimized separately for the electronics and detector parts. Using UNIBOND wafers, we are developing monolithic pixel devices fabricated with OKI Semiconductor 0.20 μm FD-SOI technology. A set of PMOS and NMOS transistors were irradiated with protons in order to investigate the total ionization dose effect in transistor operation. We evaluated also the devices with a back-gate control electrode added underneath the buried oxide layer. Primary radiation effect appears in transistor threshold shifts, which can be explained by charge traps in the oxide layers and charge states created at the silicon–oxide boundaries. We discuss the possibility of TCAD simulation for evaluation of the charge densities.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 636, Issue 1, Supplement, 21 April 2011, Pages S62–S67
نویسندگان
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