Keywords: Pocket doping engineering; Band-to-band tunneling; Current switching ratio; TCAD;
مقالات ISI (ترجمه نشده)
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Keywords: Junctionless transistor; Gate-source/drain underlap; Model; Short channel effects; TCAD;
Keywords: Silicon nanowire; Reconfigurable logic; CMOS; RFET; SBFET; Tunneling; Schottky junction; Stress; Strain; Symmetry; Deformation potential; Self-limited oxidation; Simulation; TCAD;
Keywords: CMOS; Electrostatics; Nanowire transistors; Performance; Quantum effects; TCAD;
Keywords: Biosensor; Dielectrically modulated electrically doped tunnel field-effect transistor (DM-EDTFET); Short channel effects (SCEs); Sensitivity; TCAD;
Keywords: Hydrogen; Gas sensor; Coupling effect; Silicon nanowire; Palladium nanoparticle; TCAD
Voltage oscillations during surge pulses induced by self-extinguishing non-destructive second breakdown in pn-junction diodes
Keywords: Surge pulse; Protection; TCAD; Second breakdown; Diode; Nondestructive; IEC61000-4-5;
Impact of TSV location in HVIC on CMOS operation: A mixed-mode TCAD simulation study
Keywords: 0.35â¯Î¼m BiCMOS technology; 3D integration; Smart power; Through Silicon Vias (TSV); TCAD;
Studies of buried oxide properties on nanoscale GeOI pMOSFETs for design of a high performance common source amplifier
Keywords: Analog circuits; Buried oxide (BOX); Cut-off frequency; Gain bandwidth; Germanium-on insulator (GeOI) pMOSFET; TCAD;
Analyzing the channel dopant profile in next-generation FinFETs via atom probe tomography
Keywords: Atom probe tomography; Electron energy loss spectroscopy; FinFET; Correlative microscopy; Channel; TCAD;
Allpix2: A modular simulation framework for silicon detectors
Keywords: Simulation; Silicon detectors; Geant4; TCAD; Drift-diffusion;
Digital and analog TFET circuits: Design and benchmark
Keywords: Tunnel-FET; TCAD; Simulation; Digital circuits; Analog circuits;
Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC
Keywords: TCAD; Graphite; Carbon; Schottky; Diode; 6H-SiC;
Simulation of 3D diamond detectors
Keywords: Diamond; 3D detector; Simulation; TCAD;
SET and SEU performance of single, double, triple and quadruple-gate junctionlessFETs using numerical simulations
Keywords: Bipolar amplification; Heavy ion; Junctionless; Multi-gate; Single-event upset; TCAD;
Capacitive effects in IGBTs limiting their reliability under short circuit
Keywords: IGBT; Short circuit; Oscillations; Parametric oscillations; Reliability; TCAD;
RF performance enhancement in multi-fin TFETs by scaling inter fin separation
Keywords: Multi-fin; TFET; IFS; TCAD;
Study of gamma detection capabilities of the REWARD mobile spectroscopic system
Keywords: Geant4; Radiation detectors; Spectroscopy; Gamma rays; CdZnTe detectors; TCAD;
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
Keywords: High-k; SRAM; Junctionless transistor; Dual metal gate engineering; TCAD;
10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells
Keywords: Multijunction solar cell; Irradiation; Protons; TCAD; Defects;
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices
Keywords: GaN HEMT; TCAD; Simulation; Gate current; AlGaN/GaN;gate leakage; Reliability; Tunneling; Traps;
Performance analysis of nanoscale GeSn MOSFETs for mixed-mode circuit applications
Keywords: GeSnOI MOSFETs; Gain; Maximum frequency of oscillations; Mixed-mode signal; TCAD; Unity gain cut-off frequency;
Novel tri-independent-gate FinFET for multi-current modes control
Keywords: Tri-independent-gate; FinFET; Threshold voltage; TCAD;
Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes
Keywords: Tandem solar cells; III-V on silicon; Epitaxial silicon germanium; Opto-electrical modeling; Light trapping; TCAD; RCWA;
A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer
Keywords: Source connected P-Buried layer (SC-PBL); TCAD; MISFET; Figure of merit; Breakdown enhanced; GaN;
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
Keywords: 2DEG; GaN; High -k; MOS-HEMT; TCAD;
Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance
Keywords: Tunnel field effect transistor (TFETs); Band-to-band tunneling (BTBT); Charge plasma; Band gap engineering; Germanium (Ge); Analog FOMs; RF FOMs; TCAD;
Modeling of gate underlap junctionless double gate MOSFET as bio-sensor
Keywords: Analytical model; Bio-sensor; Dielectric modulation; Junctionless MOSFET; TCAD;
Silicon nanotube SRAM and its SEU reliability
Keywords: Heavy ions; SiNT FET; Single event upset; Static noise margin; SRAM; TCAD;
Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: Application to high-k material HfO2 based MOS devices
Keywords: MOS devices; Tunneling current; Semiconductor device modeling; TCAD;
Dual delta tunnel FET: An energy efficient switch with improved current switching ratio and steeper subthreshold slope
Keywords: Delta doping; Current switching ratio; Subthreshold swing; TCAD;
Development of a silicon bulk radiation damage model for Sentaurus TCAD
Keywords: Silicon sensor; Silicon pixel detector; Radiation damage; TCAD; Device simulation;
Impact of channel thickness and spacer length on logic performance of p-Ge/n-Si hybrid CMOSFETs for ULSI applications
Keywords: High-k spacer; Hybrid CMOS; Logic performance; Propagation delay; TCAD; ULSI;
Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT
Keywords: AlGaN; Flicker noise; GaN; MOS-HEMT; Thermal noise; TCAD;
Asymmetric underlap spacer layer enabled nanoscale double gate MOSFETs for design of ultra-wideband cascode amplifiers
Keywords: Asymmetric underlap spacer; Cascode amplifier; DG MOSFETs; Gain bandwidth; TCAD;
Characteristics of ESD protection devices operated under elevated temperatures
Keywords: ESD; Temperature; TLP; SCR; Diode; TCAD;
FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects
Keywords: FDSOI; Radiation; Heavy-ion; Single-event Effects; SET; SEU; Single-Event Transient; Single-Event Upset; TCAD;
TCAD design of silicon solar cells in comparison of antireflection coatings and back surface field
Keywords: Silvaco; Silicon solar cell; TCAD; Back surface field
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
Keywords: SiGe; Multi-finger HBT; TCAD; Self-heating; Thermal coupling; Compact model
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
Keywords: 2DEG; AlN/GaN; MOSHEMT; Normally-off; Oxide interfacial charge; TCAD
BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology
Keywords: BIMOS transistor; ESD protection; FD-SOI; CMOS; TCAD; SOI;
Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs
Keywords: Single-Event Effect (SEE); FinFET; Heavy ion; Geant4; TCAD
Design, fabrication and test of novel LDMOS-SCR for improving holding voltage
Keywords: LDMOS-SCR; TCAD; ESD; TLP
Heavy-ion irradiation study in SOI-based and bulk-based junctionless FinFETs using 3D-TCAD simulation
Keywords: Bipolar amplification; Charge collection; Heavy ion; Junctionless; Bulk; SOI; Single-event upset; TCAD
Effect of thin gate dielectrics and gate materials on simulated device characteristics of 3D double gate JNT
Keywords: Dielectric; JNT; MOSFET; Nanowire; TCAD; Work function
Comprehensive simulation model for Cu(In,Ga)(Se,S)2 solar cells
Keywords: CIGS; Cu(In,Ga)(Se,S)2; TCAD; TAS; EQET; I-V-T;
Electrical noise in Circular Gate Tunnel FET in presence of interface traps
Keywords: Tunnel FET; Flicker noise; Diffusion noise; Generation-recombination noise; TCAD;
Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors
Keywords: Analytical; Dielectric modulation; Drain current; Junctionless; Modeling; MOSFET; Nanogap; Simulation; Threshold voltage; TCAD;
Transient current analysis of a GaN radiation detector by TCAD
Keywords: GaN; TCAD; Radiation detector; Transient current; Charge collection efficiency
Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation
Keywords: GaN; HEMT; Reliability; Gate current; TCAD; Deep level;