SET and SEU performance of single, double, triple and quadruple-gate junctionlessFETs using numerical simulations

In this paper, the relation between the number of gates and radiation resiliency, in Junctionless (JLT) devices, is investigated using 3D-TCAD simulation. JLT Devices having single, double, triple and quadruple-gate JLTs are studied for their single-event transient (SET) and single-event upset (SEU) radiation performance. The SEU performance enhances with the number of gates, and follows a linear trend.