کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4953831 | 1443118 | 2017 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, a compact channel noise model for gate recessed enhancement mode GaN based MOS-HEMT which is valid for all regions of operation is proposed. The compact noise model consists of high frequency thermal noise and low frequency flicker noise. The drain current, which is one of the most important parameters for compact noise model is developed by incorporating interface and oxide traps, mobility degradation due to vertical electric field, velocity saturation effect and self-heating effect. The flicker noise model is derived by considering mobility and carrier fluctuation due to traps present in both oxide and interface layer. The thermal noise and flicker noise models are validated by comparing the results with TCAD simulation and experimental results from literature respectively. Effect of thermal and flicker noise power spectral density (PSD) variation with different oxide thickness has also been analyzed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 82, December 2017, Pages 467-473
Journal: AEU - International Journal of Electronics and Communications - Volume 82, December 2017, Pages 467-473
نویسندگان
D.K. Panda, T.R. Lenka,