Effect of thin gate dielectrics and gate materials on simulated device characteristics of 3D double gate JNT

• I–V characteristics of JNT for different gate dielectrics and gate materials.
• Threshold voltage of the JNT is affected by gate work functions.
• HfO2 as gate dielectric shows better drain characteristics with respect to others.
• Al as gate material gives better drain current characteristics.
• Choosing proper gate material and gate dielectric leads to better characteristics.

In this paper a novel Silicon based three dimensional (3D) double-gate Junctionless Nanowire Transistor (JNT) of 20 nm gate length is proposed. The device characteristics such as gate characteristics and drain characteristics are studied with the help of Sentaurus TCAD by using different gate materials such as Al, Ti, n+ Polysilicon, Au and using different ultra thin gate dielectrics such as SiO2, Si3N4 and HfO2. The effect of various work functions and dielectrics on the threshold voltage of the JNT is also analysed. From the TCAD simulation results it is observed that high-K material (HfO2) as gate dielectric shows better drain characteristics with respect to others. The JNT with Al as gate material gives better current characteristics with respect to others. It is also analysed that under flat-band condition the driving of drain current does not directly depend on the gate-oxide capacitance but depends upon the channel doping concentrations. Thus by choosing the proper gate material and gate dielectric combinations, the desired device characteristics could be obtained for JNT.