Silicon nanotube SRAM and its SEU reliability

In this work, silicon nanotube FET (SiNT FET) based 6T SRAM cell operation is demonstrated and its Read, Write and Hold SNMs (static noise margin) are analyzed. The SRAM is also investigated for one of the important dynamic stability performance metrics, single event upset under heavy ion irradiation (SEU). Three different striking locations (region closer to source, center of channel and region closer to drain) and three different striking angles are used during SEU study. The worst case threshold Linear Energy Transfer (LET) is found to be 36 MeV/(mg/cm2). All the studies are carried out using mixed mode 3D numerical simulations.