کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1827614 | 1027413 | 2009 | 5 صفحه PDF | دانلود رایگان |
Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large photodiode reverse current measurements. The only degradation observed was a photodiode dark current increase. It was found that ionizing dose effects dominate this rise by inducing generation centers at the interface between shallow trench isolations and depleted silicon regions. Displacement damages are is responsible for a large degradation of dark current non-uniformity. This work suggests that designing a photodiode tolerant to ionizing radiation can mitigate an important part of proton irradiation effects.
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 610, Issue 1, 21 October 2009, Pages 225–229