کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1828816 | 1027439 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A rad-hard CMOS active pixel sensor for electron microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A rad-hard CMOS active pixel sensor for electron microscopy A rad-hard CMOS active pixel sensor for electron microscopy](/preview/png/1828816.png)
چکیده انگلیسی
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 Mrad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1±1.6)μm for 10μm pixel and (10.9±2.3)μm for 20μm pixels, respectively, which agrees well with the values of 8.4 and 10.5μm predicted by our simulation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 598, Issue 2, 11 January 2009, Pages 642–649
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 598, Issue 2, 11 January 2009, Pages 642–649
نویسندگان
Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Piero Giubilato, Tae Sung Kim, Serena Mattiazzo, Velimir Radmilovic, Sarah Zalusky,