کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1829699 1526487 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The application of neutron activation analysis, scanning electron microscope, and radiographic imaging for the characterization of electrochemically deposited layers of lanthanide and actinide elements
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
The application of neutron activation analysis, scanning electron microscope, and radiographic imaging for the characterization of electrochemically deposited layers of lanthanide and actinide elements
چکیده انگلیسی

Lanthanide and actinide targets are prepared at the University of Mainz by molecular plating, an electrochemical deposition from an organic solvent, for heavy-ion reaction studies at GSI. To acquire information about deposition yield, target thickness, and target homogeneity, the following analysis methods are applied.With neutron activation analysis (NAA) the deposition yield and the average thickness of the deposited material is determined. We report on the analytical procedure of NAA performed subsequent to the molecular plating process.Scanning electron microscope (SEM) is used to determine the morphology of the target surfaces. In combination with energy dispersive X-ray spectrometer (EDS), we also could obtain qualitative information about the chemical form of the deposited material. So far, gadolinium, samarium, holmium, and uranium targets have been investigated with SEM/EDS.With radiographic imaging (RI), targets of uranium prepared by molecular plating and by vacuum vaporization are investigated. This method is suitable to obtain information about the spatial distribution, the homogeneity, and the thickness of the target layer deposition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 590, Issues 1–3, 1 June 2008, Pages 145–150
نویسندگان
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