کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1830037 | 1027471 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of back-illuminated, fully depleted charge-coupled devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We describe a fabrication strategy to produce fully depleted, back-illuminated charge-coupled devices (CCDs). Wafers are partially processed at a commercial foundry using standard processing techniques. The wafers are then thinned to the final desired thickness, and the processing steps necessary to produce back-illuminated devices are performed in our laboratory. The CCDs are then probed at wafer level, and we describe our techniques to screen for gate insulator flaws as well as defects on the back side of the wafer that are important for fully depleted devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 653–657
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 653–657
نویسندگان
S.E. Holland, K.S. Dawson, N.P. Palaio, J. Saha, N.A. Roe, G. Wang,