کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1830394 | 1027478 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors](/preview/png/1830394.png)
چکیده انگلیسی
n-Type epitaxial silicon layers of different thickness and resistivity, grown on highly Sb doped CZ-substrate by ITME (Warsaw), and n-type MCz silicon supplied by Okmetic (Finland) were used for the processing of planar diodes at CiS (Erfurt). For the epi-diodes a standard as well as a diffusion oxygenation process was employed. Irradiations had been performed with 26Â MeV protons at the cyclotron of the Karlsruhe University and with neutrons at the TRIGA reactor of the Ljubljana University. Microscopic investigations using the DLTS method were done. The correlation of the IO2i-defect and the oxygen concentration was studied by a depth-profile measurement. The annealing behavior of the IO2i-defect at different temperatures was investigated and the activation energy extracted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 583, Issue 1, 11 December 2007, Pages 104-108
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 583, Issue 1, 11 December 2007, Pages 104-108
نویسندگان
F. Hönniger, E. Fretwurst, G. Lindström, G. Kramberger, I. Pintilie, R. Röder,