کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1831778 | 1027504 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors](/preview/png/1831778.png)
چکیده انگلیسی
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5Ã1014 to 5.9Ã1014neq/cm2. The model correctly predicts the variation in the profiles as the temperature is changed from -10 to -25âC. The measured charge collection profiles are inconsistent with the linearly varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 565, Issue 1, 1 September 2006, Pages 212-220
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 565, Issue 1, 1 September 2006, Pages 212-220
نویسندگان
M. Swartz, V. Chiochia, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hörmann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D.A. Sanders, S. Son, T. Speer,