کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1831780 1027504 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
TCT characterization of different semiconductor materials for particle detection
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
TCT characterization of different semiconductor materials for particle detection
چکیده انگلیسی

The development of digital semiconductor based X-ray detectors necessitates a detailed understanding of the applied sensor material. Under this premise a broad-band transient current technique (TCT) setup has been developed and used to characterize different semiconductors. The measurements are based on the generation of electrical charges within the sensor material and the subsequent time-resolved analysis of the charge carrier movement. From the recorded current pulses the charge collection efficiency, the charge carrier mobility and the electric field profile have been extracted. The examined materials are silicon p in n diodes, ohmic and Schottky contacted CdTe detectors, CdZnTe (CZT) crystals with Schottky contacts as well as two single-crystal CVD-diamonds.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 565, Issue 1, 1 September 2006, Pages 227–233
نویسندگان
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