کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832217 | 1027515 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of non-uniformly irradiated silicon micro-strip sensors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of non-uniformly irradiated silicon micro-strip sensors Characterization of non-uniformly irradiated silicon micro-strip sensors](/preview/png/1832217.png)
چکیده انگلیسی
We describe a method we used to characterize micro-strip sensors, which were non-uniformly irradiated up to a fluence of â¼1014 1Â MeV equivalent neutrons per cm2. The method allows for a complete bidimensional mapping of the sensor characteristics over the entire active area. Information is gathered through the Q-V characteristic, measured scanning the sensor with an infra-red laser source. Q-V characteristics are then fitted to a simple analytical model, which returns local full-depletion voltages, carrier lifetimes, etc. With the present method one can even obtain the profile of the absorbed fluence. The development and tuning of the present method have been done in the context of the R&D programs for the micro-strip forward tracker of the BTeV experiment at the Tevatron.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 571, Issue 3, 11 February 2007, Pages 636-643
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 571, Issue 3, 11 February 2007, Pages 636-643
نویسندگان
M.E. Dinardo, G. Alimonti, G. Chiodini, P. d'Angelo, L. Moroni, S. Sala,