کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1832922 1027528 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
X-ray detectors made of self-supported epitaxial GaAs
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
X-ray detectors made of self-supported epitaxial GaAs
چکیده انگلیسی
We first show that GaAs is adapted to X-ray imaging because it corresponds to a value of the atomic number which realizes the best balance between contrast, spatial resolution and absorption efficiency. Moreover, the material adapted to imaging should have a low and uniform defect concentration, which implies the use of thick epitaxial GaAs layers. Finally, because pixel detectors, processed on one surface, are bump bonded on an ASIC, the X-ray irradiation must be applied on the opposite surface. This additional condition implies that imagers should be made of self-supported epitaxial layers to prevent the attenuation of the X-ray flux in the substrate. We describe the way to obtain such type of layers and the characteristics of detectors made with them.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 563, Issue 1, 1 July 2006, Pages 13-16
نویسندگان
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