کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832922 | 1027528 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray detectors made of self-supported epitaxial GaAs
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We first show that GaAs is adapted to X-ray imaging because it corresponds to a value of the atomic number which realizes the best balance between contrast, spatial resolution and absorption efficiency. Moreover, the material adapted to imaging should have a low and uniform defect concentration, which implies the use of thick epitaxial GaAs layers. Finally, because pixel detectors, processed on one surface, are bump bonded on an ASIC, the X-ray irradiation must be applied on the opposite surface. This additional condition implies that imagers should be made of self-supported epitaxial layers to prevent the attenuation of the X-ray flux in the substrate. We describe the way to obtain such type of layers and the characteristics of detectors made with them.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 563, Issue 1, 1 July 2006, Pages 13-16
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 563, Issue 1, 1 July 2006, Pages 13-16
نویسندگان
G.C. Sun, N. Mañez, J.C. Bourgoin,