کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1833387 | 1027544 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TFA pixel sensor technology for vertex detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5×1015 p/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 560, Issue 1, 1 May 2006, Pages 122–126
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 560, Issue 1, 1 May 2006, Pages 122–126
نویسندگان
P. Jarron, D. Moraes, M. Despeisse, G. Dissertori, S. Dunand, J. Kaplon, C. Miazza, A. Shah, G.M. Viertel, N. Wyrsch,