Resistive switching behavior of BaTiO3/La0.8Ca0.2MnO3 heterostructures

• As temperature is higher than 250 K, the I–V curves of BaTiO3/La0.8Ca0.2MnO3 show RS behaviors.
• The resistive switching coefficient increases with the elevated temperatures.
• The fundamental basics for RS were discussed on modulation of interfacial barrier height.

The electric transport properties of BaTiO3/La0.8Ca0.2MnO3 heterostructures were investigated in the temperature range 100–320 K. It is found that the leakage current versus voltage (I–V) curves show strong temperature dependence, and at lower temperature (<250 K<250 K) the I–V curves are diode-like asymmetric characteristics; while they exhibit resistive switching behavior at higher temperature. Moreover, the resistive switching coefficient increases with the elevated temperature. Such switching conduction has been ascribed to the modulation of interfacial barrier height in BaTiO3/La0.8Ca0.2MnO3 heterostructures upon the ferroelectric polarization flipping. Such type of resistive switching behavior based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications.