کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1863636 1037673 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scattering of charge carriers in graphene induced by topological defects
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Scattering of charge carriers in graphene induced by topological defects
چکیده انگلیسی

We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For holes, we found that at low concentration they give a negligible contribution to the resistivity. Whenever pentagons or heptagons are introduced we realize that a fermionic current is scattered by defects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 374, Issue 42, 20 September 2010, Pages 4359–4363
نویسندگان
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