کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1876119 | 1041983 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-efficiency microstructured semiconductor neutron detectors that are arrayed, dual-integrated, and stacked
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
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چکیده انگلیسی
Silicon diodes with large aspect ratio 3D microstructures backfilled with 6LiF show a significant increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods and summed-detector 6×6-element arraying methods to dramatically increase the sensitivity to thermal neutrons. The intrinsic detection efficiency of the 6×6 array for normal-incident 0.0253 eV neutrons was found 6.8% compared against a calibrated 3He proportional counter.
► Solid-state semiconductor neutron detectors utilizing 6LiF.
► Large aspect ratio 3D microstructured silicon diodes.
► Arrayed solid-state semiconductor neutron detectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Radiation and Isotopes - Volume 70, Issue 7, July 2012, Pages 1121–1124
Journal: Applied Radiation and Isotopes - Volume 70, Issue 7, July 2012, Pages 1121–1124
نویسندگان
Steven L. Bellinger, Ryan G. Fronk, Timothy J. Sobering, Douglas S. McGregor,