کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1876297 | 1041998 | 2012 | 4 صفحه PDF | دانلود رایگان |
An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher Isc and harder radiation tolerance but lower Voc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries.
► The Schottky diode was used as the converter of the betavoltaic battery.
► The radiation damage of converter was accelerated by using alpha particles.
► The Schottky diode has higher radiation resistance than that of the p–n junction.
► The Schottky diode could still be a promising converter of the betavoltaic battery.
Journal: Applied Radiation and Isotopes - Volume 70, Issue 3, March 2012, Pages 438–441