کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1878143 | 1532128 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon doping system at the research reactor FRM II
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Silicon doping has being carried out at FRM II since 2 years. During the commissioning of our new reactor, a simple test rig was used to determine the neutron flux profile at the irradiation position and optimise a nickel absorber liner, which is equipped at the irradiation position for vertical smoothing of the neutron flux profile. MCNP-code was used during the design of the liner. The final automatic doping system is designed to allow the irradiation of cylindrical silicon single crystals 500 mm high and up to 200 mm in diameter. Silicon ingots are additionally rotated continuously about their own cylinder axis during irradiation. The neutron flux density is measured online by using self-powered-neutron (SPN) detectors. The necessary doping homogeneity of ±5% is achieved. The doping procedure and doping quality of ingots with high target resistivity are also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Radiation and Isotopes - Volume 67, Issues 7â8, JulyâAugust 2009, Pages 1220-1224
Journal: Applied Radiation and Isotopes - Volume 67, Issues 7â8, JulyâAugust 2009, Pages 1220-1224
نویسندگان
X. Li, H. Gerstenberg, I. Neuhaus,