کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1878145 | 1532128 | 2009 | 4 صفحه PDF | دانلود رایگان |
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473×1019 n Ω cm−1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from −5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
Journal: Applied Radiation and Isotopes - Volume 67, Issues 7–8, July–August 2009, Pages 1230–1233