Effect of gamma radiation on the electrical properties of Polyaniline/silicon carbide heterojunctions

• We demonstrate the fabrication of PANI/p-SiC devices with good electrical properties.
• The electrical characteristics of the devices present good reproducibility.
• We show that the PANI/p-SiC devices are good candidates for gamma irradiation sensors.

Polyaniline thin films have been deposited by a very simple technique on p-type Silicon Carbide (SiC) substrates to fabricate heterojunctions devices with good electrical properties. In this work two heterojunctions devices of Polyaniline (PANI) on p-type 4H–SiC and 6H–SiC substrates were electrically characterized using current- voltage (I-V) in the temperature range 20–430 K Capacitance–frequency (C-f) measurements. Furthermore, impedance and capacitance measurements are carried out to study the effect of gamma irradiation on these devices. Additionally, we demonstrate not only the ease of fabrication of PANI/p-SiC heterostructures, but also we show strong indication that these heterostructures have potential applications as sensors of gamma irradiation.