MOSFET with a boron-loaded gate as a low-energy neutron dosimeter

A MOSFET-based low-energy neutron dosimeter has been fabricated using a 10B loaded gate electrode as (n,α) converter. The response to thermal neutrons has been studied.

► Feasibility of a metal–oxide–semiconductor thermal neutron dosimeter is investigated.
► Monolithically integrated boron-loaded gate electrode acts as a (n,α) converter.
► Sensitivity of 2 V/Sv is obtained.