Electronic structure of bulk ferromagnetic Ge0.86Mn0.14Te

The electronic structure of polycrystalline Ge0.86Mn0.14Te—ferromagnetic semiconductor with TC=110 K, has been studied by means of resonant photoemission spectroscopy for photon energies close to the Mn 3p→3d excitation. The contribution of Mn 3d states to the electronic structure of the system was revealed and position of the Mn ions in the crystal, characteristic of GeTe-based diluted magnetic semiconductors was proved.