کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1883154 | 1043278 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Creation of MnAs nanoclusters during processing of GaMnAs
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaMnAs layers on (0Â 0Â 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920Â K under hydrostatic Ar pressure up to 1.1Â GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 78, Issue 10, Supplement, October 2009, Pages S116-S119
Journal: Radiation Physics and Chemistry - Volume 78, Issue 10, Supplement, October 2009, Pages S116-S119
نویسندگان
J. Bak-Misiuk, J.Z. Domagala, P. Romanowski, E. Dynowska, E. Lusakowska, A. Misiuk, W. Paszkowicz, J. Sadowski, A. Barcz, W. Caliebe,