کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1884809 1043368 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of sputtered W–Si–N thin films by a monoenergetic positron beam
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم تشعشع
پیش نمایش صفحه اول مقاله
Characterization of sputtered W–Si–N thin films by a monoenergetic positron beam
چکیده انگلیسی

A monoenergetic positron beam was employed to characterize the uniformity and the microstructural variation of thermally treated W–Si–N thin film. As the annealing temperature is increased, positrons are found to be progressively trapped in sites rich in silicon. This behavior is explained by the formation of W clusters from which positrons are favorably trapped into the Si–N amorphous matrix. Positron results are discussed together with information obtained on similar samples by Rutheford backscattering, infrared spectroscopy and transmission electron microscopy measurements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 76, Issue 2, February 2007, Pages 209–212
نویسندگان
, , , , ,