Low dose measurement with thick gate oxide MOSFETs

The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated.

► Low dose limit of thick-oxide Metal-Oxide-Semiconductor dosimeters is investigated.
► Influence of read-time instability, electronic noise, temperature variation and calibration is considered.
► It is concluded that such sensors can operate in the mGy range with acceptable accuracy.