Irradiation effects on the C–V and G/ω–V characteristics of Sn/p-Si (MS) structures

In this paper, we have investigated the effects of 60Co gamma (γ)-ray source on the electrical properties of Sn/p-Si metal–semiconductor (MS) structures using the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements before and after irradiation at room temperature. The MS structures were investigated in the frequency range 20–700 kHz irradiation effects on the electrical properties of Sn/p-Si MS structures before irradiation, and after irradiation, these structures were exposed to 60Co γ-ray source irradiation with the dose rate of 2.12 kGy/h and the total dose range was 0–500 kGy at room temperature. It was found that the C–V and G/ω−V curves were strongly influenced with both frequency and the presence of the dominant radiation-induced defects, and the series resistance was increased with increase in dose. On the other hand, the interface state density (Nss) as depended on radiation dose and frequency was determined from C–V and G/ω–V measurements, and the interface states densities decreased with increase in frequency and radiation dose.