کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1891428 | 1533531 | 2013 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Interface formation of CuInSe2 (112) and ZnO deposited by atomic layer deposition Interface formation of CuInSe2 (112) and ZnO deposited by atomic layer deposition](/preview/png/1891428.png)
Interfaces of epitaxial CuInSe2 (112) surfaces to ZnO have been prepared by Atomic Layer Deposition (ALD) and are analyzed in situ by photoelectron spectroscopy at BESSY. LEED data show a (0001) oriented ZnO film for thicker films despite the large lattice mismatch. In contrast to results obtained from ZnO-MOMBE (Metal-Organic Molecular Beam Epitaxy) preparation where an inherent ZnSe interface layer of 2 nm is formed, for ALD a ZnIn2Se4 interface layer is observed which is introducing a different band alignment as in the MOMBE case.
► Interfacial behavior of CuInSe2 to ALD deposited ZnO investigated in situ by photoemission and LEED.
► In situ determined band alignment.
► Observation of a reacted interfacial layer of ZnIn2Se4.
► Application of synchrotron radiation to observe the substrate and overlayer signals with the same kinetic energy.
Journal: Radiation Physics and Chemistry - Volume 93, December 2013, Pages 72–76