کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1891632 | 1043904 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of structural changes caused by nanosecond laser annealing of Ge- and Sn-implanted Si crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study of structural changes caused by nanosecond laser annealing of Ge- and Sn-implanted Si crystal Study of structural changes caused by nanosecond laser annealing of Ge- and Sn-implanted Si crystal](/preview/png/1891632.png)
چکیده انگلیسی
Silicon single crystals were implanted with Ge or Sn ions and then annealed by nanosecond laser beam in a single-pulse mode. The structural changes caused by the laser annealing are studied by means of the Rutherford back-scattering and X-ray diffraction using the synchrotron radiation. In Ge-implanted Si samples in areas irradiated with a fluence below the threshold value of about 5% and with that near the threshold value of 40% of the total amount of the dopants introduced are located mainly in substitutional positions. For the Si implanted with Sn ions we observe the increase in the amount of interstitial dopants from 15% to 25% in regions annealed with the optimal fluence and with higher than that, respectively. The dependence of the lattice parameter on the laser fluence is studied. An increase in the lattice parameters for both implanted crystals in annealed regions is due to dopant ions expanding the elementary cell.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 80, Issue 10, October 2011, Pages 1064-1067
Journal: Radiation Physics and Chemistry - Volume 80, Issue 10, October 2011, Pages 1064-1067
نویسندگان
D. Klinger, D. Żymierska, R. Minikayev, K. Nowakowska-Langier, J.B. Pelka, L. Nowicki, B. Kozankiewicz, W. Caliebe,