X-ray characterization of GGG homoepitaxial layers with introduced divalent Ni ions

The study of structural perfection of GGG homoepitaxial layers with incorporated divalent Ni ions Ni,Ge:GGG has been performed by means of HR X-ray diffraction and optical spectroscopy. Epitaxial layers were grown by the LPE technique from supercooled high temperature solution with different concentration of NiO and GeO2 on both sides of the polished <1 1 1> oriented GGG substrates. Incorporation of optically inert Ge4+ ions made it possible to incorporate Ni2+ ions in the garnet lattice. High structural perfection and the relevant absorption spectra are prerequisite for the use of Ni,Ge:GGG epitaxial layers as infrared saturable absorbers.