Defects in silicon introduced by helium implantation and subsequent annealing

Formation and morphology of defects, including bubbles and voids, induced in silicon by He+ implantation and subsequent high temperature and pressure treatment have been studied by means of X-ray diffraction method and grazing incidence small angle X-ray scattering (GISAXS). Enhanced pressure affects the formation of voids and/or of large cavities inducing creation of faceted structures. Moreover, high pressure treatment suppresses creation of interstitial-related defects.