کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
227914 | 464830 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion](/preview/png/227914.png)
چکیده انگلیسی
Film growth rate and composition variation were numerically analyzed during the selective area growth of InGaN on both GaN triangular stripe and hexagonal pyramid microfacets. To obtain the In composition of the film, concentration of In and Ga atoms due to the surface diffusion was added to the concentration determined from the Laplace equation that governs the gas phase diffusion. When the surface diffusion is considered, the In composition and resulting wavelength increased compared to the results obtained from the vapor phase diffusion model. The In content also increased according to the increasing mask width.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Industrial and Engineering Chemistry - Volume 19, Issue 5, 25 September 2013, Pages 1747–1751
Journal: Journal of Industrial and Engineering Chemistry - Volume 19, Issue 5, 25 September 2013, Pages 1747–1751
نویسندگان
Byung Moon So, Suk Bum Youn, Ik-Tae Im,