کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
297324 | 511754 | 2012 | 4 صفحه PDF | دانلود رایگان |

To accurately and conveniently describe the interactions between incident energetic particles and target material, energy lose and range of particles were studied during ionization impact in the material. The theories of Bethe–Bloch and Lindhard–Scharff were firstly introduced. Based on the measured data from the theories, a 4-parameter double exponential function model was proposed for calculating LET. By the model, the projected ranges and Bragg peaks, the maximum of LET, of heavy ions and electron in silicon were calculated. The results indicate that the discrepancies between the model and SRIM are very small. The model can be conveniently used to other applications, such as Bragg peak, projected range and threshold energy of single event effect.
► A simple model is proposed for calculating LET of heavy ions and electron in silicon.
► The model is presented as 4-parameter double exponential function.
► Bragg peak is easily and accurately estimated in the first time.
► The discrepancies between our model and others are very small.
Journal: Nuclear Engineering and Design - Volume 245, April 2012, Pages 202–205