Palladium transport in SiC

This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd2Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures.
► The high temperature mobility of palladium silicides within polycrystalline SiC was studied.
► Corrosion of SiC by Pd was seen in all cases.
► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found.
► The penetration and transport of palladium silicides in SiC along grain boundaries was found.