کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
42900 45945 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
CO oxidation on rough Au thin films grown on Si wafer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
CO oxidation on rough Au thin films grown on Si wafer
چکیده انگلیسی

The CO oxidation reactivity of rough Au thin films containing ∼5% W was investigated. At room temperature, no CO oxidation could be detected under our experimental conditions, whereas conversion of CO to CO2 was observed at 160 °C. At higher temperatures, the initial reactivity increased. However, with increasing reaction time, it was evident that deactivation of the catalytically active sites was more facile at higher temperatures. Temperature-programmed desorption (TPD) suggested that the formation of strongly bound carbonate species could be responsible for the deactivation process. Based on the TPD data, we propose that decomposition of carbonate species on the surface is the rate-determining step of CO oxidation.

The CO oxidation reactivity of nanoporous Au thin films with W impurity (∼5% of Au) was studied. No CO oxidation is observed at room temperature. At 160 °C, the conversion of CO to CO2 was observed. Decomposition of the carbonate species on the surface is the rate-determining step of the CO oxidation reaction. Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Catalysis A: General - Volume 347, Issue 1, 1 September 2008, Pages 112–116
نویسندگان
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