Preparation and Characterization of Transparent Conductive SnO2-F Thin Film Deposited by Spray Pyrolysis: Relationship between Loading Level and Some Physical Properties

Relationship between loading level and some physical properties of the SnO2-F film has been investigated. SnO2-F thin films were prepared by spray pyrolysis technique using modified respiratory therapist nebulizer at substrate temperature in the range of 400-520̊C. A stannous chloride solution was used as precursor and ammonium fluoride (NH4F) as dopant with 20% [F]/[Sn] ratio. The sheet resistance was found to decrease withthe increasing loading level, and sheet resistancebecame steady after the loading level was greater than0.45 mg/cm2. The transmittance was found to decrease with the increase of loading level but the decrease was not significant. The transparent conductive oxide of SnO2-F thin films were obtained, with transmittance was greater than 82.5% and sheet resistance of 21.4 Ω/sq. This results are comparable with the reported values (81.9% and 21.8 Ω/sq) [1] and this film can be used for efficient support of dye-sensitized solar cells electrode.