An ISM band CMOS power amplifier design for WLAN

This paper describes the novel chip design and modeling of 2.4 GHz CMOS transistor Class-E power amplifier (PA) to meet IEEE 802.11b/g receiver specifications for WLAN applications. Techniques for accurate modeling of active and passive components at 2.4 GHz WLAN band are presented. The input power for this PA is −5 dBm. The overall layout is completed by TSMC 0.25μm radio frequency (RF) process. The post-layout simulation indicates that the power-added efficiency (PAE) is about 50.6% and this PA can generate 24.1 dBm of output power from a 1.5 V supply into a 50Ω load.