کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4547449 1627121 2007 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Non-steady state partitioning of dry cleaning surfactants between tetrachloroethylene (PCE) and water in porous media
موضوعات مرتبط
مهندسی و علوم پایه علوم زمین و سیارات فرآیندهای سطح زمین
پیش نمایش صفحه اول مقاله
Non-steady state partitioning of dry cleaning surfactants between tetrachloroethylene (PCE) and water in porous media
چکیده انگلیسی

Trapped organic solvents, in both the vadose zone and below the water table, are frequent sources of environmental contamination. A common source of organic solvent contamination is spills, leaks, and improper solvent disposal associated with dry cleaning processes. Dry cleaning solvents, such as tetrachloroethylene (PCE), are typically enhanced with the addition of surfactants to improve cleaning performance. The objective of this work was to examine the partitioning behavior of surfactants from PCE in contact with water. The relative rates of surfactants partitioning and PCE dissolution are important for modeling the behavior of waste PCE in the subsurface, in that they influence the interfacial tension of the PCE, and how (or if) interfacial tension changes over time in the subsurface. The work described here uses a flow-through system to examine simultaneous partitioning and PCE dissolution in a porous medium. Results indicate that both nonylphenol ethoxylate nonionic surfactants and a sulfosuccinate anionic surfactant partition out of residual PCE much more rapidly than the PCE dissolves, suggesting that in many cases interfacial tension changes caused by partitioning may influence infiltration and distribution of PCE in the subsurface. Non-steady-state partitioning is found to be well-described by a linear driving force model incorporating measured surfactant partition coefficients.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Contaminant Hydrology - Volume 93, Issues 1–4, 15 August 2007, Pages 149–160
نویسندگان
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